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Conference Articles

Assessing Circuit Hermeticity by Electrolysis
Presented at the 2000 GaAs Mantech Conference, Washington DC
Bill Roesch, Shawn Peterson, Amy Poe, Steve Brockett, Steve Mahon, and Jim Bruckner, May 2000, 4 pages.

This work describes a corrective action project to improve circuit hermeticity. The objective was to provide quick feedback on experiments to improve performance in biased humidity environments. Hermeticity was evaluated quickly by using current flow (electrolysis) in water applied directly to the surface of the devices. Weaknesses in device construction were discovered, and effective solutions were evaluated, by using the electrolysis technique.

Moisture Resistance of GaAs ICs: Breaking the 5,000 PPM Barrier (request a copy)
Presented at the 1993 Government Microcircuits Applications Conference (GOMAC), New Orleans, LA
Bill Roesch & Bharati Ingle, November 1993, 3 pages.

This report summarizes engineering test results obtained on a 132 pin multilayer ceramic cavity packages with custom GaAs ASIC devices. The testing was developed to intentionally induce worst case conditions that exceed any environments expected under normal use. The results provide conclusive evidence that high moisture content does not affect GaAs devices electrically or visually.

Assessing Reliability of GaAs Substrate Vias (request a copy)
Presented at the 1992 GaAs MANTECH Conference, San Antonio, TX
Bill Roesch, April 1992, 4 pages.

These test results indicate that wet-etch and laser-drilled vias are not susceptible to mechanical damage induced by thermal cycling and thermal shock. Novel structures are successful at detecting cracks and are also useful in assessing via over-etching.

Reliability Of Plastic Packaging For GaAs ICs (request a copy)
Presented at the MANTECH Conference, Reno, NV
Bill Roesch, Tony Rubalcava, and Bharati Ingle, April 1990, 4 pages.

This study summarizes preliminary feasibility evaluations on GaAs FETs and ICs encapsulated in plastic packages. These initial results indicate that GaAs devices can be manufactured in plastic and can reliably withstand moisture penetration and thermal excursions.

Predicting GaAs Reliability With Accelerated Testing (request a copy)
Invited Paper, presented at the MANTECH Conference, Reno, NV
Bill Roesch and Richard Allen, April 1990, 1 page Abstract.

This abstract briefly discusses the problems of applying MIL-HDBK-217.

Proving GaAs Reliability With IC Element Testing (request a copy)
Presented at the MANTECH Conference, Nashville, TN
Bill Roesch & Doug Stunkard, November 1988, 5 pages.

This study identifies element testing used for investigating GaAs circuit reliability. Data on 4,241 ohmic contacts, thin film resistors, metallization interconnects, and MesFETs is presented in a condensed format. Correlation to IC data is made.



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