Perodical Articles
Volume Impacts on GaAs Reliability Improvement (request a copy)
Special Submission to Microelectronics Reliability
Bill Roesch, Volume 41, Number 8 Page 1123, August 2001, 5 pages.
For more than a decade, the focus of GaAs Reliability has been on high
temperature testing. To the contrary, GaAs Devices actually fail for
quite different failure mechanisms during typical use. This investigation
provides data on failure mechanisms that acctually occur and how they may
be related to traditional quality metrics.
Lifetesting GaAs MMICs Under RF Stimulus (EXPANDED) (request a copy)
Submission to IEEE Transactions on Microwave Theory and Techniques
Bill Roesch, Tony Rubalcava, and Clark Hanson (Motorola), Volume 40,
Number 12, December 1992, 9 pages.
This article discusses very high temperature lifetest results on MMIC switches.
This expanded version includes new data on step stress testing, data collection
methodology, failure analysis, distribution calculations, activation energy
calculations, and additional expanded conclusions.
Reliability Prediction: The Applicability Of High Temperature Testing (request a copy)
Submission to Solid State Technology, Volume 33, Number 9, September 1990, pages 103-108
Richard Allen and Bill Roesch, August 1990, 7 pages.
This article discusses the use of highly accelerated temperature testing in
predicting the failure rates of general purpose ICs.
Studying Lifetimes and Failure Rates Of GaAs MMICs (request a copy)
Microwaves and RF
Michael F. Peters, Bill Roesch, & Tony Rubalcava, July 1988, 4 pages.
Accelerated lifetesting is performed on a distributed MMIC amplifier. Data
indicates that high reliability can be expected. In addition, good reliability
can be expected in terms of radiation hardness and insensitivity to electrostatic
discharge.
FA Leads to Proper ESD Tests (request a copy)
Submission to Test & Measurement World
Amy Poe, Steve Brockett, and Tony Rubalcava, Volume 21, Number 14, Page 33, November 2001, 4 pages.
Analysis of device failures helps identify the ESD model for GaAs ICs.
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