Symposium Articles
Failure Analysis of CDM ESD Damage in a GaAs RFIC (request a copy)
Presented at the 2000 International Symposium for Testing and Failure Analysis, Bellevue, WA
Amy Poe, Steve Brockett, and Tony Rubalcava, November 2000, 6 pages.
This publication presents the importance of Charged Device Model (CDM) ESD testing for radio
frequency devices. A novel deprocessing technique is described for laser induced delayering as
well as various ESD measurements.
Humidity Resistance of GaAs ICs
Presented at the 1994 GaAs IC Symposium, Philadelphia, PA
Bill Roesch, October 1994, 4 pages.
A series of investigations into reliability effects of moisture on GaAs structures have lead
to the conclusion that GaAs devices have resistance to degradation effects of humidity. This
paper provides evidence that GaAs devices are ready for low-cost non-hermetic packages and GaAs
ICs may have superior reliability performance compared to silicon devices under accelerated
humidity conditions.
GaAs IC Reliability, The Next Generation (request a copy)
Presented at the 1993 GaAs IC Symposium, San José, CA
Bill Roesch, October 1993, 4 pages.
A historical perspective is presented which provides evidence regarding changes in the
way people think about reliability, for GaAs MesFET integrated circuits in particular.
Comparisons to silicon reliability history, and between old and new philosophies are made.
Long-Term Effects of Sidegating On GaAs MesFETs (request a copy)
Presented at the 1992 International Reliability Physics Symposium, San Diego CA
Hema Cholan, Douglas Stunkard, Tony Rubalcava, March 1992, 5 pages.
An impediment to widespread VLSI implementation of GaAs devices is sidegating. Several
processing and design variations which influence circuit immunity to sidegating are examined
over the lifetimes of MesFETs. Conclusive evidence shows that sidegating effects will not
grow worse as devices wear out.
Thermo-Reliability Relationships of GaAs ICs (request a copy)
Presented at the GaAs IC Symposium, Nashville, TN
Bill Roesch, November 1988, 4 pages.
Thermal conductivity and failure mechanism activation energies are key parameters
for determining reliable operation of GaAs ICs. The liquid crystal, diode drop, and
infrared temperature measurement techniques are discussed.
Lack Of Latent and Cumulative ESD Effects On MesFET-Based GaAs ICs (request a copy)
Presented at the EOS/ESD Symposium, Anaheim, CA
Tony Rubalcava & Bill Roesch, September 1988, 3 pages.
The purpose of this study is to demonstrate that GaAs IC structures have no latent or
cumulative effects from ESD pulsing. These findings are of significance because GaAs devices
can offer an advantage over MOSFET-based silicon ICs which are susceptible to latent damage
resulting in degradation or field failures.
Gallium Arsenide IC Reliability (request a copy)
Tutorial Presentation at the International Reliability Physics Symposium, Monterey, CA
Bill Roesch, April 1988, 12 pages.
This tutorial provides an overview of MesFET IC reliability technology. It includes
information on thermal resistance, failure mechanisms, packaging, GaAs failure analysis,
ESD and radiation performance. A systematic program of reliability growth is explained,
and the general level of GaAs IC reliability is presented. Comparisons are made with
silicon technology.
Depletion Mode GaAs IC Reliability (request a copy)
Presented at the GaAs IC Symposium, Portland, OR
Bill Roesch & Michael F. Peters, October 1987, 4 pages
This work presents results of digital MSI and MMIC reliability testing. Element
test correlations are made. A comparison of IC and element median lives reveals a
non-linear relationship between integration and reliability. General improvements
of GaAs device reliability over time are indicated.
ElectroStatic Discharge Effects on GaAs ICs (request a copy)
Presented at the EOS/ESD Symposium, Las Vegas, NV
Anthony L. Rubalcava, Douglas Stunkard, and Bill Roesch, September 1986, 7 pages.
The ESD susceptibility of individual GaAs circuit elements and ICs is investigated in
detail by this paper. The evaluation was made using a human body model ESD simulator which
applied over 8,000 zaps to nearly 300 different GaAs structures. Eight conclusions are made.
Reliability Investigation of 1 Micron Depletion Mode IC MesFETs (request a copy)
Presented at the International Reliability Physics Symposium, Anaheim, CA
Dominic Ogbonnah & Arthur Fraser, April 1986, 6 pages.
This paper describes testing on MesFETs with details on analysis and determination
of failure mechanisms. Early accelerated lifetesting is discussed.
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