Units TQTRx TQHiP TQHBT3 TQPED TQRLC Release Status   Production Production Production Production Production Transistor Type   1 E-Mode 1 D-Mode 1 D-Mode 1 BiP 1 E-Mode 2 D-Mode (None) E-FET Vth V (E) +0.15     +0.35 N/A D-FET Vp V (D, D2) -0.6,-2.2 -2.2   -0.8 N/A HBT Vbe       +1.15     Gate Length µm 0.6 0.5   0.5 N/A HBT Emitter µm     3 x 30   N/A Drain Current, sat mA/mm (E,D,D2) 80,70,270 (365 Imax) 250 (335 Imax) N/A 225 (310 Imax) N/A Ft GHz 20 16.5 (50% Idss) 40 25,30 N/A Gm or Beta mS/mm (E,D,D2) 225,200,270 140 130 350,625 N/A Nom. Breakdown V 12,12,15 (E,D,D2) 18 (14 min) 24,7,14 (cbo,beo,ceo) 15,15 (E,D) N/A Interconnect Total Layers 3 3 3 3 4 MIM Caps pf/mm2 1200 600 1200,600 600 600 NiCr Resistors Ohms/sq 50 50 50 50 50 Bulk Resistors Ohms/sq 600 600 350 285 (None)

Units .5-µm HFET Size µm, # fingers 300, 4 VDD/IDS V, mA 8, 22.5 Freq GHz 2 10 18 NF Min dB 0.8 2.2 3.3 MSG, MAG dB 20.8 13.8 10.4 PAE %   >70 65 50 POUT W/mm 0.60 Ft GHz 19C fMAX GHz 57D IDSS mA/mm 245 Gm mS/mm 165 VBD V -22 VP V -1.8

Units .25-µm MMW pHEMT Size µm, # fingers 400, 8 600, 10 VDD/IDS V, mA 2, 20 6, 90 Freq GHz 10 18 26 10 18 26 NF Min dB 0.6 1.1 1.6   MSG, MAG dB 14.9 12.6 11.4 17.5 15.4 11.3 PAE %   60 50 40 65 55 45 POUT W/mm 0.10 0.60 Ft GHz 55 55 fMAX GHz 75D 75D IDSS mA/mm 285 285 Gm mS/mm 375B 375B VBD V -21 -21 VP V -1 -1