PowerBand™ Has Redefined Wideband RF Technology




TriQuint Semiconductor has created a revolutionary new wideband, high power discrete RF transistor family for broadband applications including radar, signal jammers and wireless communications. TriQuint’s new PowerBand™* device family delivers high power performance across an exceptionally wide bandwidth while maintaining very high efficiency.

Before PowerBand™, RF designers were typically forced to accept reduced performance (less efficiency or lower power) if the amplifier needed to operate across a wide bandwidth. PowerBand™ offers the RF designer unequalled performance without all the traditional sacrifices.

Tech Overview
Get the details behind PowerBand™ from co-inventor, Bill McCalpin and watch how PowerBand™ changes the future of broadband RF power.

The PowerBand™ Advantage

  • Highly Efficient: Greater than 50 percent PAE (power added efficiency) as measured in a broadband fixture (500MHz-3GHz).
  • High Power: RF output power from 10 Watts to 50 Watts across the entire band.
  • Savings and Cost Reductions: As a result of significantly improved efficiency the overall cost of a given system can be reduced in two ways:
    a) Fewer amplifier line-ups are needed for a given system output power requirement, resulting in a smaller BOM, more space on the PCB and simpler assembly.
    b) Lower thermal management system cost as a result of reduced energy loss as heat. Less ‘waste heat’ in a system creates operational savings through reduced energy costs and additional savings through a decreased need for equipment dedicated to thermal management.

PowerBand™: Enables a New Era of System Solutions
Many broadband circuit designs today rely on RF amplifiers operating in low efficiency configurations such as Class A or heavy Class AB operation. Because PowerBand™ allows system designers to utilize the efficiency of Class AB across a very broad bandwidth, whole new approaches to system design are possible. For example: the efficiencies of PowerBand™ can enable broadband hand-held devices with extended battery life and reduced complexity, or products with more functionality within the same form factor since less space is dedicated to RF signal amplification. Ground-based systems that are much reduced in size, weight and cost are also now possible thanks to PowerBand™ innovation.

RF Design Simplification with PowerBandTM

PowerBand™ Has Arrived
TriQuint Semiconductor has debuted PowerBand™ at the 2008 MILCOM (military communications) conference and exhibition in the San Diego (California) Convention Center. PowerBand™ devices will be on display in TriQuint’s booth: Number 1707. TriQuint will also begin making samples and test fixtures available after MILCOM. PowerBand™ evaluation fixtures that enable testing of sample device performance across an entire band (i.e. 500MHz – 3GHz) are also now available.

Connect with TriQuint / Design with PowerBand™
Connect with a TriQuint engineer and discuss your wideband RF design needs. Click here to begin the discussion.

Learn More About PowerBand™
TriQuint invites you to register for PowerBand™ updates, including new product releases. To keep connected to the latest developments in the future of wideband discrete RF power, Click here.

Related Information:
Press Release

*2008 Patent Pending

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RF Transistors
Part Description Technology Band Operating Voltage P1dB (Watts) Gain (dB) Efficiency (%) Wide-band EVA Board
T1L2003028-SP   LDMOS 500MHz - 2.0GHz 28V 30 10 60 T1L2003028-SPTF
T1P2701012-SP   pHEMT 500MHz - 2.7GHz 12V 10 10 50 T1P2701012-SPTF
T1P3002012-SP   pHEMT 500MHz - 3.0GHz 12V 20 10 50 T1P3002012-SPTF
T1P3002028-SP   pHEMT 500MHz - 2.5GHz 28V 20 10 50 T1P3002028-SPTF
T1P3003028-SP   pHEMT 500MHz - 2.0GHz 28V 30 10 50 T1P3003028-SPTF
T1P3005028-SP   pHEMT 500MHz - 2.0GHz 28V 50 10 50 T1P3005028-SPTF