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Click the Part number to display the datasheet or to view a list of all documents available for that product (i.e. Package, Tape and Reel, and S-parameter data). Click a column heading to sort by that column.

Part Description Freq(GHz) Power(dBm) Gain(dB) NF/PAE +V IQ(mA) Status Updated
TGA2921-SG 4 Watt 802.11a Packaged Amplifier 4.9 to 6 36 11 - 8 800   02/15/08
TGA2922-SG 2 Watt 802.11a Packaged Amplifier 4.9 to 6 34 11 - 8 480   02/15/08
TGA2923-SG 10 Watt MMDS Packaged Amplifier 3.5 40 9 - 8 1200   02/15/08
TGA2924-SG 10 Watt MMDS Packaged Amplifier 1 - 4 40 12 - 8 1200   02/15/08
TGA2925-SG 5.6 Watt 3.5 GHz Packaged HPA 2 - 4 37.5 12 - 8 750   02/15/08

Part Description Freq(GHz) Gain (dB) Power(dBm) NF/PAE Vd(V) IQ(mA) Status Updated
TGF2021-01 X-band Discrete Power pHEMT DC - 12 11 > 30 59% 8 - 12 75 - 125   08/07/07
TGF2021-02 X-band Discrete Power pHEMT DC - 12 11 > 33 59% 8 - 12 150 - 250   08/07/07
TGF2021-04 X-band Discrete Power pHEMT DC - 12 11 > 36 59% 8 - 12 300 - 500   08/07/07
TGF2021-08 X-band Discrete Power pHEMT DC - 12 11 > 39 59% 8 - 12 600 - 1000   08/07/07
TGF2021-12 X-band Discrete Power pHEMT DC - 12 11 > 42 58% 8 - 12 900 - 1500   08/07/07
TGF2022-06 Ku-band Discrete Power pHEMT DC - 20 13 > 28 58% 8 - 12 45 - 75   09/07/07
TGF2022-12 Ku-band Discrete Power pHEMT DC - 20 13 > 31 58% 8 - 12 90 - 150   09/07/07
TGF2022-24 Ku-band Discrete Power pHEMT DC - 20 13 > 34 58% 8 - 12 180 - 300   08/22/07
TGF2022-48 Ku-band Discrete Power pHEMT DC - 20 13 > 37 58% 8 - 12 360 - 600   09/07/07
TGF2022-60 Ku-band Discrete Power pHEMT DC - 20 12 > 38 57% 8 - 12 448 - 752   09/07/07
TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT DC - 18 15 >38 55% 28 - 40 125 Prototype 06/16/08
TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT DC - 18 15 >41 55% 28 - 40 250 Prototype 06/16/08
TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT DC - 18 15 >44 55% 28 - 40 500 Prototype 06/16/08
TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT DC - 18 15 >47 55% 28 - 40 1000 Prototype 06/16/08
TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT DC - 18 15 >50 55% 28 - 40 2000 Prototype 06/16/08
TGF2960-SD 0.5 W DC-5 GHz Packaged HFET DC-5 19 27 4/60% 8 100   08/01/07
TGF2961-SD 1 W DC-4GHz Packaged HFET DC-4 18 31 4/60% 8 200   08/01/07
TGF4112-EPU 12mm HFET DC - 8.0 14@2GHz 37 55% 8 750 MOQ 02/22/01
TGF4118-EPU 18mm HFET DC - 6.0 13.5@2GHz 38.5 53% 8 1690 MOQ 02/26/01
TGF4124-EPU 24mm HFET DC - 4.0 13@2GHz 40 51% 8 2170 MOQ 10/08/98
TGF4230-SCC 1.2 mm HFET DC - 12.0 10 28.5 55% 8 96   12/18/02
TGF4240-SCC 2.4mm HFET DC - 12.0 10 31.5 56% 8 192   03/31/03
TGF4250-SCC 4.8 mm HFET DC - 10.5 8.5 34 53% 8 384   12/18/02
TGF4260-SCC 9.6mm HFET DC - 10.5 9.5 37 52% 8.5 768   03/31/03

Part Description Freq (GHz) Gain (dB) IIP3 (dBm) NF/PAE Vd(V) IQ (mA) Status Updated
CLY2 High Power Packaged GaAs FET; +23.5 dBm to 3 14.5   55% 3     12/15/05
CLY5 High Power Packaged GaAs FET; +26.5 dBm to 2.5 9.5   55% 3     07/06/06
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